- 专利标题： Systems and methods for metallic deionization
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申请号： US15988350申请日： 2018-05-24
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公开(公告)号： US11742196B2公开(公告)日： 2023-08-29
- 发明人: Chih-Wei Chao , Shu-Yen Wang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/67 ; B08B3/08
摘要：
In an embodiment, a method includes: receiving a wafer from a first dilution tank; immersing the wafer in a deionization tank, wherein the deionization tank comprises a tank solution that comprises a deionizing solution; determining a metal ion concentration within the tank solution; performing remediation within the deionization tank in response to determining that the metal ion concentration is greater than a threshold value; and moving the wafer to a second dilution tank.
公开/授权文献
- US2692038A Key for office machines 公开/授权日：1954-10-19
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