Invention Grant
- Patent Title: Through electrode substrate and semiconductor device
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Application No.: US17168631Application Date: 2021-02-05
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Publication No.: US11742273B2Publication Date: 2023-08-29
- Inventor: Takamasa Takano , Satoru Kuramochi
- Applicant: DAI NIPPON PRINTING CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: DAI NIPPON PRINTING CO., LTD.
- Current Assignee: DAI NIPPON PRINTING CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP 16248415 2016.12.21 JP 17038412 2017.03.01 JP 17100924 2017.05.22
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48 ; H01L23/538 ; H01L23/00 ; H01L25/065 ; H01L25/16 ; H01L49/02 ; H05K1/11 ; H01L23/12 ; H05K3/28

Abstract:
A through electrode substrate includes: a substrate having a first surface and a second surface facing the first surface; through electrodes penetrating through the substrate; and a first capacitor including a first conductive layer, an insulating layer, and a second conductive layer, arranged on the first surface side of the substrate, and electrically connected with at least one of the through electrodes. The first conductive layer is arranged on the first surface side of the substrate and is electrically connected with the through electrode. The insulating layer includes a first part and a second part and is arranged on the first conductive layer. The second conductive layer is arranged on the insulating layer. The first part is arranged between the first conductive layer and the second conductive layer. The second part covers at least a part of a side surface of the first conductive layer.
Public/Granted literature
- US20210159153A1 THROUGH ELECTRODE SUBSTRATE AND SEMICONDUCTOR DEVICE Public/Granted day:2021-05-27
Information query
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