Invention Grant
- Patent Title: Semiconductor nanocrystal, and method of preparing the same
-
Application No.: US17171198Application Date: 2021-02-09
-
Publication No.: US11742443B2Publication Date: 2023-08-29
- Inventor: Shin Ae Jun , Eun Joo Jang , Soo Kyung Kwon , Taek Hoon Kim , Won Joo Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: CANTOR COLBURN LLP
- Priority: KR 20120119887 2012.10.26
- Main IPC: H01L31/0296
- IPC: H01L31/0296 ; H01L31/0304 ; H01L31/0352 ; B82Y40/00 ; B82Y30/00
Abstract:
A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0≤x≤1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.
Public/Granted literature
- US20210167228A1 SEMICONDUCTOR NANOCRYSTAL, AND METHOD OF PREPARING THE SAME Public/Granted day:2021-06-03
Information query
IPC分类:
