Invention Grant
- Patent Title: Dynamic random access memory (DRAM) device and memory controller therefor
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Application No.: US17862718Application Date: 2022-07-12
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Publication No.: US11749326B2Publication Date: 2023-09-05
- Inventor: Seung-Jun Shin , Tae-Young Oh
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR 20150126786 2015.09.08
- Main IPC: G11C8/06
- IPC: G11C8/06 ; G11C8/18 ; G11C8/10 ; G11C7/22 ; G11C7/10 ; G11C11/4076 ; G06F3/06 ; G06F13/16

Abstract:
A memory system includes a memory controller and a memory. The memory controller selectively operates in a first mode and a second mode. In the first mode, the memory controller transmits a first command continuously during a plurality of clock cycles. In the second mode, the memory controller to mix a second command with the first command and transmit the mixture of the first command and the second command. The memory changes command latch timing depending on the first or second mode.
Public/Granted literature
- US20220351764A1 DYNAMIC RANDOM ACCESS MEMORY (DRAM) DEVICE AND MEMORY CONTROLLER THEREFOR Public/Granted day:2022-11-03
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