- 专利标题： Semiconductor substrate and method of manufacturing thereof
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申请号： US17873122申请日： 2022-07-25
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公开(公告)号： US11749526B2公开(公告)日： 2023-09-05
- 发明人: I-Sheng Chen , Tzu-Chiang Chen , Cheng-Hsien Wu
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 分案原申请号： US16006375 2018.06.12
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; C30B29/06 ; C30B29/08 ; C30B29/66 ; C30B33/02 ; C30B33/10 ; H01L21/306 ; H01L21/308
摘要：
A semiconductor substrate includes a first material layer made of a first material and including a plurality of protrusions, and a second material layer made of a second material different from the first material, filling spaces between the plurality of protrusions, and covering the plurality of protrusions. Each of the protrusions includes a tip and a plurality of facets converging at the tip, and adjacent facets of adjacent protrusions are in contact with each other.
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