Invention Grant
- Patent Title: Spin-orbit torque magnetization rotational element, spin-orbit torque magnetoresistive effect element, and magnetic memory
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Application No.: US17288036Application Date: 2019-02-06
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Publication No.: US11756600B2Publication Date: 2023-09-12
- Inventor: Yohei Shiokawa
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- International Application: PCT/JP2019/004180 2019.02.06
- International Announcement: WO2020/161814A 2020.08.13
- Date entered country: 2021-04-23
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H10N52/80 ; G11C11/18 ; H01F10/32 ; H10N50/10 ; H10N50/85 ; H10B61/00

Abstract:
A spin-orbit torque magnetization rotational element includes a first ferromagnetic layer and a spin-orbit torque wiring facing the first ferromagnetic layer and extending in a first direction. The spin-orbit torque wiring has a plurality of atomic planes in which atoms are arranged and the plurality of atomic planes have reference surfaces in which the same atoms are arranged and a buckling surface having a buckling part. The buckling surface has a plurality of first atoms forming a main surface substantially parallel to the reference surfaces and one or more second atoms forming a buckling part bent toward the main surface.
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