- 专利标题: Method and system for determining a charged particle beam exposure for a local pattern density
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申请号: US17304307申请日: 2021-06-17
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公开(公告)号: US11756765B2公开(公告)日: 2023-09-12
- 发明人: Akira Fujimura , Harold Robert Zable , Nagesh Shirali , Abhishek Shendre , William E. Guthrie , Ryan Pearman
- 申请人: D2S, Inc.
- 申请人地址: US CA San Jose
- 专利权人: D2S, Inc.
- 当前专利权人: D2S, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: MLO, a professional corp.
- 主分类号: H01J37/302
- IPC分类号: H01J37/302 ; H01J37/317 ; G03F1/36 ; G03F1/70 ; G03F7/20
摘要:
Methods for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area of the desired shape based on an original set of exposure information. A backscatter for a sub area is calculated, based on the original set of exposure information. Dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A pre-PEC maximum dose is determined for the local pattern density, based on a pre-determined target post-PEC maximum dose. The original set of exposure information is modified with the pre-PEC maximum dose and the increased dosage of the at least one pixel in the sub area to create a modified set of exposure information.
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