Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17231623Application Date: 2021-04-15
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Publication No.: US11756881B2Publication Date: 2023-09-12
- Inventor: Shinichi Uchida , Yasutaka Nakashiba , Shinichi Kuwabara
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP 20090116 2020.05.22
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01F27/28 ; H01L23/00

Abstract:
A semiconductor device includes: a first substrate; a multilayer wiring layer formed on the first substrate; a first inductor formed into a meander shape on the multilayer wiring layer in a plan view; and a second inductor formed into a meander shape on the multilayer wiring layer in a plain view, and arranged so as to be close to the first inductor in a plan view and not to overlap with the first inductor. A transformer is configured by the first inductor and the second inductor and, in a plan view, the first inductor and the second inductor extend along a first direction in which one side of the first substrate extends.
Public/Granted literature
- US20210366827A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-11-25
Information query
IPC分类: