Invention Grant
- Patent Title: Semiconductor storage device and method of manufacturing semiconductor storage device
-
Application No.: US17203990Application Date: 2021-03-17
-
Publication No.: US11756909B2Publication Date: 2023-09-12
- Inventor: Shinya Watanabe , Shinya Arai
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 20150045 2020.09.07
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00 ; H01L25/18 ; H01L25/00

Abstract:
According to one embodiment, a semiconductor storage device includes a first chip and a second chip. The first chip includes a first substrate, a transistor, and a first pad. The second chip includes a second pad, a memory cell array, and a second substrate. The second pad is on the first pad. The second chip is bonded to the first chip. The first chip and the second chip includes, when viewed in a first direction orthogonal to the first substrate, a first region and a second region. The first region includes the memory cell array. The second region surrounds an area around the first region and includes a wall extending from the first substrate to the second substrate. The second substrate includes a first opening passing through the second substrate in the second region.
Public/Granted literature
- US20220077089A1 SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2022-03-10
Information query
IPC分类: