- 专利标题: Layout design methodology for stacked devices
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申请号: US17572296申请日: 2022-01-10
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公开(公告)号: US11756951B2公开(公告)日: 2023-09-12
- 发明人: Fong-yuan Chang , Po-Hsiang Huang , Chin-Chou Liu , Chin-Her Chien , Ka Fai Chang
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 分案原申请号: US16530631 2019.08.02
- 主分类号: H01L25/065
- IPC分类号: H01L25/065 ; H01L27/02 ; H01L27/06 ; G11C8/18 ; H01L23/48
摘要:
A layout design methodology is provided for a device that includes two or more identical structures. Each device can have a first die, a second die stacked over the first die and a third die stacked over the second die. The second die can include a first through-silicon via (TSV) and a first circuit, and the third die can include a second TSV and a second circuit. The first TSV and the second TSV can be linearly coextensive. The first and second circuit can each be a logic circuit having a comparator and counter used to generate die identifiers. The counters of respective device die can be connected in series between the dice. Each die can be manufactured using the same masks but retain unique logical identifiers. A given die in a stack of dice can thereby be addressed by a single path in a same die layout.
公开/授权文献
- US20220130818A1 LAYOUT DESIGN METHODOLOGY FOR STACKED DEVICES 公开/授权日:2022-04-28
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