- 专利标题： Semiconductor device and method for fabricating the same
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申请号： US17709385申请日： 2022-03-30
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公开(公告)号： US11757016B2公开(公告)日： 2023-09-12
- 发明人: Yi-Fan Li , Wen-Yen Huang , Shih-Min Chou , Zhen Wu , Nien-Ting Ho , Chih-Chiang Wu , Ti-Bin Chen
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权： TW 7134933 2018.10.03
- 分案原申请号： US16177368 2018.10.31
- 主分类号： H01L29/49
- IPC分类号： H01L29/49 ; H01L29/40 ; H01L27/092
摘要：
A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.
公开/授权文献
- US20220223710A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日：2022-07-14
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