Invention Grant
- Patent Title: Solid-state relay and semiconductor device
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Application No.: US17600906Application Date: 2020-04-07
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Publication No.: US11758745B2Publication Date: 2023-09-12
- Inventor: Shigeru Onoya , Noboru Inoue , Takahiro Fukutome
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JP 19079044 2019.04.18
- International Application: PCT/IB2020/053291 2020.04.07
- International Announcement: WO2020/212800A 2020.10.22
- Date entered country: 2021-10-01
- Main IPC: H10K50/00
- IPC: H10K50/00 ; H01L21/8234 ; H01L27/06 ; H01L27/07 ; H01L31/167

Abstract:
A solid-state relay having favorable electrical characteristics is provided. The solid-state relay includes a first circuit and a second circuit. The first circuit includes a first light-emitting element. The second circuit includes a first light-receiving element, a memory, and a first switch. The memory includes a second switch. The second switch includes a second semiconductor layer. The first switch and the first light-emitting element are formed using a first semiconductor layer. The first semiconductor layer and the second semiconductor layer contain gallium, and the second semiconductor layer further contains oxygen. On or off of the first light-emitting element is controlled by a first signal supplied to the first circuit. First data, which is generated when the first light-receiving element converts light emitted by the first light-emitting element into voltage, is supplied to the memory. Conduction or non-conduction of the first switch is controlled by the first data stored in the memory.
Public/Granted literature
- US20220190270A1 SOLID-STATE RELAY AND SEMICONDUCTOR DEVICE Public/Granted day:2022-06-16
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