公开(公告)号：US11758745B2

公开(公告)日：2023-09-12

申请号：US17600906

申请日：2020-04-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shigeru Onoya ,  Noboru Inoue ,  Takahiro Fukutome

IPC: H10K50/00 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/07 ,  H01L31/167

CPC classification number: H10K50/00 ,  H01L21/8234 ,  H01L27/0629 ,  H01L27/0727 ,  H01L31/167

Abstract: A solid-state relay having favorable electrical characteristics is provided. The solid-state relay includes a first circuit and a second circuit. The first circuit includes a first light-emitting element. The second circuit includes a first light-receiving element, a memory, and a first switch. The memory includes a second switch. The second switch includes a second semiconductor layer. The first switch and the first light-emitting element are formed using a first semiconductor layer. The first semiconductor layer and the second semiconductor layer contain gallium, and the second semiconductor layer further contains oxygen. On or off of the first light-emitting element is controlled by a first signal supplied to the first circuit. First data, which is generated when the first light-receiving element converts light emitted by the first light-emitting element into voltage, is supplied to the memory. Conduction or non-conduction of the first switch is controlled by the first data stored in the memory.

公开(公告)号：US20130314074A1

公开(公告)日：2013-11-28

申请号：US13895841

申请日：2013-05-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kei Takahashi ,  Noboru Inoue

IPC: G01R1/36

CPC classification number: G01R1/36 ,  G01R1/06766 ,  G01R31/27 ,  G09G3/006

Abstract: To provide a measurement device which allows long-term accurate measurement of voltage without adversely affecting a device under test, by ensuring a predetermined level of resistance to ESD and reducing leakage current. A measurement device includes a probe needle for contacting a device under test, a first FET for detecting voltage of the device under test, and a protection circuit for protecting the first FET from static electricity. The protection circuit includes a second FET having an oxide semiconductor film as a channel formation region.

Abstract translation: 为了提供一种测量装置，其允许长期精确测量电压，而不会对被测器件产生不利影响，通过确保ESD的预定电阻和减小漏电流。 测量装置包括用于接触被测器件的探针，用于检测被测器件电压的第一FET，以及用于保护第一FET免受静电的保护电路。 保护电路包括具有氧化物半导体膜作为沟道形成区的第二FET。

公开(公告)号：US09817032B2

公开(公告)日：2017-11-14

申请号：US13895841

申请日：2013-05-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kei Takahashi ,  Noboru Inoue

IPC: G01R1/36 ,  G01R1/067 ,  G01R31/27 ,  G09G3/00

CPC classification number: G01R1/36 ,  G01R1/06766 ,  G01R31/27 ,  G09G3/006

Abstract: To provide a measurement device which allows long-term accurate measurement of voltage without adversely affecting a device under test, by ensuring a predetermined level of resistance to ESD and reducing leakage current. A measurement device includes a probe needle for contacting a device under test, a first FET for detecting voltage of the device under test, and a protection circuit for protecting the first FET from static electricity. The protection circuit includes a second FET having an oxide semiconductor film as a channel formation region.