Invention Grant
- Patent Title: Thin film metrology
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Application No.: US17846910Application Date: 2022-06-22
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Publication No.: US11761751B2Publication Date: 2023-09-19
- Inventor: Chih Hung Chen , Kei-Wei Chen , Te-Ming Kung
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: G01B11/06
- IPC: G01B11/06 ; G01Q60/24

Abstract:
A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.
Public/Granted literature
- US20220316861A1 THIN FILM METROLOGY Public/Granted day:2022-10-06
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