- 专利标题： Semiconductor device and method of forming the same
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申请号： US16902007申请日： 2020-06-15
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公开(公告)号： US11764164B2公开(公告)日： 2023-09-19
- 发明人: Shigeru Sugioka , Keizo Kawakita , Hidenori Yamaguchi , Bang Ning Hsu
- 申请人： MICRON TECHNOLOGY, INC.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dorsey & Whitney LLP
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L21/311 ; H10B12/00
摘要：
A semiconductor device includes a semiconductor substrate; and a multilevel wiring structure on the semiconductor substrate, the multilevel wiring structure including at least an intermediate metal layer over the semiconductor substrate and an uppermost metal layer over the intermediate metal layer, and the multilevel wiring structure being divided into a main circuit portion and a scribe portion surrounding the main circuit portion; wherein the scribe portion of the multilevel wiring layer includes at least a metal pad exposed in the intermediate metal layer.
公开/授权文献
- US20210391279A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 公开/授权日：2021-12-16
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