Invention Grant
- Patent Title: Reflective mask and method for manufacturing a semiconductor device using the same
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Application No.: US17407425Application Date: 2021-08-20
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Publication No.: US11768432B2Publication Date: 2023-09-26
- Inventor: Sang-Ho Yun , Soo Kyung Kim , Jaikyun Park , Donghoon Lee , Rankyung Jung , Soonmok Ha
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR 20200121771 2020.09.21
- Main IPC: G03F1/24
- IPC: G03F1/24 ; H01L21/027

Abstract:
A reflective mask includes a central region and first and second peripheral regions at opposite sides of the central region, respectively, the first peripheral region including a first out-of-band region having a first edge region extending in a first direction, and a first expansion region between the first edge region and the central region, and a first outer auxiliary region adjacent to the first expansion region of the first out-of-band region in the first direction, the first outer auxiliary region having a first auxiliary pattern region.
Public/Granted literature
- US20220091497A1 REFLECTIVE MASK AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2022-03-24
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