发明授权
- 专利标题： MFM capacitor with multilayered oxides and metals and processes for forming such
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申请号： US16368450申请日： 2019-03-28
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公开(公告)号： US11769789B2公开(公告)日： 2023-09-26
- 发明人: Nazila Haratipour , Chia-Ching Lin , Sou-Chi Chang , Ashish Verma Penumatcha , Owen Loh , Mengcheng Lu , Seung Hoon Sung , Ian A. Young , Uygar Avci , Jack T. Kavalieros
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Schwabe, Williamson & Wyatt P.C.
- 主分类号： H01G4/30
- IPC分类号： H01G4/30 ; H10B51/00 ; H01L23/522 ; H01L49/02 ; H01G4/012
摘要：
A capacitor is disclosed. The capacitor includes a first metal layer, a second metal layer on the first metal layer, a ferroelectric layer on the second metal layer, and a third metal layer on the ferroelectric layer. The second metal layer includes a first non-reactive barrier metal and the third metal layer includes a second non-reactive barrier metal. A fourth metal layer is on the third metal layer.
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