Invention Grant
- Patent Title: Line edge roughness analysis using atomic force microscopy
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Application No.: US17552301Application Date: 2021-12-15
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Publication No.: US11774241B2Publication Date: 2023-10-03
- Inventor: Wei-Shan Hu , Dong Gui , Jang Jung Lee , Che-Liang Li , Duen-Huei Hou , Wen-Chung Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: G01B21/30
- IPC: G01B21/30 ; G01Q60/24

Abstract:
Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.
Public/Granted literature
- US20220107179A1 LINE EDGE ROUGHNESS ANALYSIS USING ATOMIC FORCE MICROSCOPY Public/Granted day:2022-04-07
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