Invention Grant
- Patent Title: Power semiconductor device
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Application No.: US17146785Application Date: 2021-01-12
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Publication No.: US11776890B2Publication Date: 2023-10-03
- Inventor: Florian Maxl , Markus Pretschuh , Maximilian Hofer , Peter Kurcik
- Applicant: Samsung SDI Co., Ltd.
- Applicant Address: KR Yongin-si
- Assignee: SAMSUNG SDI CO., LTD.
- Current Assignee: SAMSUNG SDI CO., LTD.
- Current Assignee Address: KR Yongin-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Priority: EP 151435 2020.01.13 KR 20210002490 2021.01.08
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L25/065 ; H01L23/367 ; B60L58/10 ; B60K6/28 ; H01L23/538 ; H01L23/373 ; H01L23/36 ; H01L23/492

Abstract:
A power semiconductor device includes: a power semiconductor; a base metal sheet; and a flexible printed circuit board (PCB) between the base metal sheet and the power semiconductor. The power semiconductor includes a first power pad on a side facing the flexible PCB, and the flexible PCB includes a conductive pad, one side of which is electrically connected to the first power pad of the power semiconductor and the opposite side of which is electrically connected to the base metal sheet.
Public/Granted literature
- US20210217693A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2021-07-15
Information query
IPC分类: