Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US17853524Application Date: 2022-06-29
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Publication No.: US11776935B2Publication Date: 2023-10-03
- Inventor: Jing-Cheng Lin , Chen-Hua Yu , Po-Hao Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- The original application number of the division: US14799756 2015.07.15
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/50 ; H01L23/552 ; H01L21/3205 ; H01L25/00 ; H01L23/498 ; H01L23/538 ; H01L23/00 ; H01L23/31 ; H01L21/56

Abstract:
An integrated fan out package on package architecture is utilized along with a reference via in order to provide a reference voltage that extends through the InFO-POP architecture. If desired, the reference via may be exposed and then connected to a shield coating that can be used to shield the InFO-POP architecture. The reference via may be exposed by exposing either a top surface or a sidewall of the reference via using one or more singulation processes.
Public/Granted literature
- US20220328457A1 Semiconductor Device and Method of Manufacture Public/Granted day:2022-10-13
Information query
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