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    Seal Ring Structure with Zigzag Patterns and Method Forming Same
    1.
    发明公开
    Seal Ring Structure with Zigzag Patterns and Method Forming Same 审中-公开

    公开(公告)号：US20240363457A1

    公开(公告)日：2024-10-31

    申请号：US18767481

    申请日：2024-07-09

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Kuan-Hung Chen ,  Hong-Seng Shue ,  Po-Hao Tsai ,  Mirng-Ji Lii

    IPC分类号： H01L23/10 ,  H01L21/50 ,  H01L21/762 ,  H01L23/522

    CPC分类号： H01L23/10 ,  H01L21/50 ,  H01L21/76297 ,  H01L23/5226

    摘要： A method includes forming a plurality of dielectric layers, forming a lower portion of a seal ring including a plurality of metal layers, each extending into one of the plurality of dielectric layers, depositing a first passivation layer over the plurality of dielectric layers, forming an opening in the first passivation layer, forming a via ring in the opening and physically contacting the lower portion of the seal ring, and forming a metal ring over the first passivation layer and joined to the via ring. The via ring and the metal ring form an upper portion of the seal ring. The metal ring includes an edge portion having a zigzag pattern. The method further includes forming a second passivation layer on the metal ring, and performing a singulation process to form a device die, with the seal ring being proximate edges of the device die.

    Seal ring structure with zigzag patterns and method forming same
    2.
    发明授权
    Seal ring structure with zigzag patterns and method forming same 有权

    公开(公告)号：US12087648B2

    公开(公告)日：2024-09-10

    申请号：US17659048

    申请日：2022-04-13

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Kuan-Hung Chen ,  Hong-Seng Shue ,  Po-Hao Tsai ,  Mirng-Ji Lii

    IPC分类号： H01L23/10 ,  H01L21/50 ,  H01L21/762 ,  H01L23/522

    CPC分类号： H01L23/10 ,  H01L21/50 ,  H01L21/76297 ,  H01L23/5226

    摘要： A method includes forming a plurality of dielectric layers, forming a lower portion of a seal ring including a plurality of metal layers, each extending into one of the plurality of dielectric layers, depositing a first passivation layer over the plurality of dielectric layers, forming an opening in the first passivation layer, forming a via ring in the opening and physically contacting the lower portion of the seal ring, and forming a metal ring over the first passivation layer and joined to the via ring. The via ring and the metal ring form an upper portion of the seal ring. The metal ring includes an edge portion having a zigzag pattern. The method further includes forming a second passivation layer on the metal ring, and performing a singulation process to form a device die, with the seal ring being proximate edges of the device die.

    Semiconductor Device and Method
    3.
    发明公开
    Semiconductor Device and Method 审中-公开

    公开(公告)号：US20240250019A1

    公开(公告)日：2024-07-25

    申请号：US18598266

    申请日：2024-03-07

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Ting-Li Yang ,  Po-Hao Tsai ,  Ming-Da Cheng ,  Yung-Han Chuang ,  Hsueh-Sheng Wang

    IPC分类号： H01L23/522 ,  H01L21/48 ,  H01L23/00 ,  H01L23/528

    CPC分类号： H01L23/5226 ,  H01L21/486 ,  H01L23/528 ,  H01L24/11 ,  H01L24/14

    摘要： Methods for forming dummy under-bump metallurgy structures and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a second passivation layer over the first passivation layer; a first under-bump metallurgy (UBM) structure over the first redistribution line, the first UBM structure extending through the first passivation layer and the second passivation layer and being electrically coupled to the first redistribution line; and a second UBM structure over the second redistribution line, the second UBM structure extending through the second passivation layer, the second UBM structure being electrically isolated from the second redistribution line by the first passivation layer.