Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof for selectively etching dummy fins
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Application No.: US17568428Application Date: 2022-01-04
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Publication No.: US11776961B2Publication Date: 2023-10-03
- Inventor: Zhi-Chang Lin , Wei-Hao Wu , Jia-Ni Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: HAYNES AND BOONE, LLP
- The original application number of the division: US16279824 2019.02.19
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L27/02 ; H01L29/08 ; H01L21/8238 ; H01L29/66 ; H01L21/311 ; H10B10/00
Abstract:
A semiconductor device includes a first device fin and a second device fin that are each located in a first region of the semiconductor device. The first region has a first pattern density. A first dummy fin is located in the first region. The first dummy fin is disposed between the first device fin and the second device fin. The first dummy fin has a first height. A third device fin and a fourth device fin are each located in a second region of the semiconductor device. The second region has a second pattern density that is greater the first pattern density. A second dummy fin is located in the second region. The second dummy fin is disposed between the third device fin and the fourth device fin. The second dummy fin has a second height that is greater than the first height.
Public/Granted literature
- US20220130826A1 Semiconductor Device and Manufacturing Method Thereof for Selectively Etching Dummy Fins Public/Granted day:2022-04-28
Information query
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