Invention Grant
- Patent Title: Device comprising a transistor
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Application No.: US17734486Application Date: 2022-05-02
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Publication No.: US11776995B2Publication Date: 2023-10-03
- Inventor: Alexis Gauthier , Pascal Chevalier , Gregory Avenier
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: CROWE & DUNLEVY
- Priority: FR 09283 2019.08.19
- The original application number of the division: US16995079 2020.08.17
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/8222 ; H01L29/66 ; H01L29/732
Abstract:
A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.
Public/Granted literature
- US20220254879A1 DEVICE COMPRISING A TRANSISTOR Public/Granted day:2022-08-11
Information query
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