Invention Grant
- Patent Title: Semiconductor device with nanostructures
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Application No.: US18070311Application Date: 2022-11-28
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Publication No.: US11777040B2Publication Date: 2023-10-03
- Inventor: Hsin-Hsiang Tseng , Chih-Fei Lee , Chia-Pin Cheng , Fu-Cheng Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- The original application number of the division: US15469646 2017.03.27
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; H01L31/0232 ; H01L27/146 ; H01L31/112
Abstract:
A semiconductor device includes a substrate, a photo sensing region, and a plurality of semiconductor plugs. The photo sensing region is in the substrate. The photo sensing region forms a p-n junction with the substrate. The semiconductor plugs extend from above the photo sensing region into the photo sensing region.
Information query
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