Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US17334569Application Date: 2021-05-28
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Publication No.: US11784111B2Publication Date: 2023-10-10
- Inventor: Cheng-Yuan Kung , Hung-Yi Lin , Chin-Cheng Kuo , Wu Chou Hsu
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: FOLEY & LARDNER LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L25/16

Abstract:
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a semiconductor substrate, at least one conductive via, a second insulation layer and a conductive layer. The conductive via is disposed in the semiconductor substrate and includes an interconnection metal and a first insulation layer around the interconnection metal. A portion of the first insulation layer defines an opening to expose the interconnection metal. The second insulation layer is disposed on a surface of the semiconductor substrate and in the opening. The conductive layer is electrically disconnected with the semiconductor substrate by the second insulation layer and electrically connected to the interconnection metal of the at least one conductive via.
Public/Granted literature
- US20220384309A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2022-12-01
Information query
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