Invention Grant
- Patent Title: Plated metal layer in power packages
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Application No.: US17334491Application Date: 2021-05-28
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Publication No.: US11784114B2Publication Date: 2023-10-10
- Inventor: Jonathan Almeria Noquil , Makarand Ramkrishna Kulkarni , Osvaldo Jorge Lopez , Yiqi Tang , Rajen Manicon Murugan , Liang Wan
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Dawn Jos; Frank D. Cimino
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/00

Abstract:
In some examples, a semiconductor package comprises a multi-layer package substrate. The multi-layer package substrate includes first and second metal layers, the first metal layer positioned above the second metal layer and coupled to the second metal layer by way of a via. The substrate also includes a dielectric covering at least part of the first and second metal layers and the via. The package includes a plated metal layer plated on at least part of the first metal layer and positioned above the dielectric, a combination of the first metal layer and the plated metal layer being thicker than the second metal layer. The package includes a semiconductor die having a device side, the device side vertically aligned with and coupled to the plated metal layer.
Public/Granted literature
- US20220181241A1 PLATED METAL LAYER IN POWER PACKAGES Public/Granted day:2022-06-09
Information query
IPC分类: