- 专利标题: Die interconnect substrate, an electrical device and a method for forming a die interconnect substrate
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申请号: US17355301申请日: 2021-06-23
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公开(公告)号: US11784128B2公开(公告)日: 2023-10-10
- 发明人: Robert Alan May , Kristof Darmawikarta , Sri Ranga Sai Sai Boyapati
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Schwabe, Williamson & Wyatt P.C
- 主分类号: H01L23/532
- IPC分类号: H01L23/532 ; H01L23/29 ; H01L23/522 ; H01L23/538 ; H01L23/00 ; H01L23/50
摘要:
A die interconnect substrate comprises a bridge die comprising at least one bridge interconnect connecting a first bridge die pad of the bridge die to a second bridge die pad of the bridge die. The die interconnect substrate comprises a multilayer substrate structure comprising a substrate interconnect. The bridge die is embedded in the multilayer substrate structure. The substrate interconnect extends from a level above the bridge die to a level below the bridge die. The multilayer substrate structure further comprises an electrically insulating layer comprising a first electrically insulating material. The multilayer substrate structure further comprises an electrically insulating filler structure located laterally between the bridge die and the electrically insulating layer, wherein the electrically insulating filler structure comprises a second electrically insulating material different from the first electrically insulating material.
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