A detection device comprising: an insulating substrate; a plurality of gate lines that are provided on the insulating substrate, and extend in a first direction; a plurality of signal lines that are provided on the insulating substrate, and extend in a second direction intersecting the first direction; a switching element coupled to each of the gate lines and each of the signal lines; a first photoelectric conversion element that comprises a first semiconductor layer containing amorphous silicon, and is coupled to the switching element; and a second photoelectric conversion element that comprises a second semiconductor layer containing polysilicon, and is coupled to the switching element.