Detection device
    4.
    发明授权

    公开(公告)号:US11645825B2

    公开(公告)日:2023-05-09

    申请号:US17831128

    申请日:2022-06-02

    Inventor: Masahiro Tada

    CPC classification number: G06V10/141 G06V10/147 G06V10/761 G06V40/1318

    Abstract: According to an aspect, a detection device includes: a substrate; a plurality of photodiodes arranged on the substrate; a light source configured to emit light to an object to be detected; a detection circuit configured to detect first detection signals based on reverse bias currents of the photodiodes when the light source is off, and to detect second detection signals based on the reverse bias currents of the photodiodes when the light source is on; and a memory configured to store first imaging data based on the first detection signals when the light source is off, second imaging data based on the second detection signals when the light source is on, and difference data between the first imaging data and the second imaging data.

    Detection device
    5.
    发明授权

    公开(公告)号:US11604543B2

    公开(公告)日:2023-03-14

    申请号:US17831914

    申请日:2022-06-03

    Inventor: Masahiro Tada

    Abstract: According to an aspect, a detection device includes: photodiodes; a light source; a detection circuit configured to detect detection signals output from the photodiodes; and an exposure period adjusting circuit configured to determine an exposure period of the photodiodes. A relation between an output value output from the detection circuit and the exposure period comprises a linear region and a saturated region, and a gradient of the output value with respect to the exposure period in the saturated region is smaller than a gradient of the output value with respect to the exposure period in the linear region. The exposure period adjusting circuit is configured to determine the exposure period based on a first output value output from the detection circuit in a first exposure period, a second output value output from the detection circuit in a second exposure period, and a reference output value set in advance.

    Display device
    6.
    发明授权

    公开(公告)号:US10103178B2

    公开(公告)日:2018-10-16

    申请号:US15049385

    申请日:2016-02-22

    Abstract: A display device according to one embodiment, includes a thin-film transistor. The thin-film transistor includes a semiconductor layer including a channel region, first and second high-concentration impurity regions on both sides of the channel region, low-concentration impurity regions on both sides of the channel region, gate electrodes, first and second electrodes, and a light-shielding electrode opposing the channel region and the entire first high-concentration impurity region via an insulating layer, to produce a capacitance between itself and the first high-concentration impurity region.

    Display device and display device provided with sensor

    公开(公告)号:US09891748B2

    公开(公告)日:2018-02-13

    申请号:US15059450

    申请日:2016-03-03

    CPC classification number: G06F3/0416 G06F3/0412 G06F3/044

    Abstract: According to one embodiment, a display device includes plural display pixels arranged in a matrix, plural gate lines, plural source lines and a control circuit which controls by applying intermittent driving and a column-inversion drive scheme, an operation in which drive signals are supplied to the gate lines and the source lines, and an image signal is supplied to the display pixels and held thereby, wherein the display pixels each include a liquid crystal in which alignment of liquid crystal molecules is changed by a voltage between pixel electrodes and a common electrode, and the control circuit applies in a signal stop period in the intermittent driving, a voltage corresponding to a gradation higher than or equal to white gradation to the source lines in a case where a display mode of the liquid crystal is a normally-black mode.

    Thin film semiconductor device
    10.
    发明授权
    Thin film semiconductor device 有权
    薄膜半导体器件

    公开(公告)号:US09536907B2

    公开(公告)日:2017-01-03

    申请号:US14734253

    申请日:2015-06-09

    Abstract: According to one embodiment, provided is a thin film transistor with which it is possible to reduce the leakage current and thereby, for a liquid crystal display device, to ensure a good display quality. The thin film transistor includes a semiconductor layer, gate electrodes, first light-blocking electrodes, and second light-blocking electrodes. The first light-blocking electrodes are disposed opposite to the gate electrodes with respect to the semiconductor layer and opposed to channel regions to block light incident into the channel regions. The second light-blocking electrodes are disposed opposite to the semiconductor layer with respect to the gate electrodes, arranged to block light incident into the channel regions, and electrically connected with one of a signal line and a pixel electrode.

    Abstract translation: 根据一个实施例,提供了一种薄膜晶体管,通过该薄膜晶体管可以减小漏电流,从而可以降低液晶显示装置,以确保良好的显示质量。 薄膜晶体管包括半导体层,栅电极,第一遮光电极和第二遮光电极。 第一遮光电极相对于半导体层与栅电极相对设置,并且与沟道区相对,以阻挡入射到沟道区的光。 第二遮光电极相对于栅电极与半导体层相对配置,被布置成阻挡入射到沟道区中的光,并且与信号线和像素电极之一电连接。

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