Invention Grant
- Patent Title: Subfin leakage suppression using fixed charge
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Application No.: US16341020Application Date: 2016-12-14
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Publication No.: US11784239B2Publication Date: 2023-10-10
- Inventor: Sean T. Ma , Aaron D. Lilak , Justin R. Weber , Harold W. Kennel , Willy Rachmady , Gilbert W. Dewey , Cheng-Ying Huang , Matthew V. Metz , Jack T. Kavalieros , Anand S. Murthy , Tahir Ghani
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Akona IP
- International Application: PCT/US2016/066436 2016.12.14
- International Announcement: WO2018/111250A 2018.06.21
- Date entered country: 2019-04-10
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/66 ; H01L29/40

Abstract:
Disclosed herein are tri-gate transistor arrangements, and related methods and devices. For example, in some embodiments, a transistor arrangement may include a fin stack shaped as a fin extending away from a base, and a subfin dielectric stack. The fin includes a subfin portion and a channel portion, the subfin portion being closer to the base than the channel portion. The subfin dielectric stack includes a transistor dielectric material, and a fixed charge liner material disposed between the transistor dielectric material and the subfin portion of the fin.
Public/Granted literature
- US20200044059A1 SUBFIN LEAKAGE SUPPRESSION USING FIXED CHARGE Public/Granted day:2020-02-06
Information query
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