Invention Grant
- Patent Title: Semiconductor device and method
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Application No.: US17853104Application Date: 2022-06-29
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Publication No.: US11784242B2Publication Date: 2023-10-10
- Inventor: Bo-Feng Young , Po-Chi Wu , Che-Cheng Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/3065 ; H01L29/10 ; H01L29/165
Abstract:
A manufacturing process and device are provided in which a first opening in formed within a substrate. The first opening is reshaped into a second opening using a second etching process. The second etching process is performed with a radical etch in which neutral ions are utilized. As such, substrate push is reduced.
Public/Granted literature
- US20220328662A1 Semiconductor Device and Method Public/Granted day:2022-10-13
Information query
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