Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17002618Application Date: 2020-08-25
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Publication No.: US11784245B2Publication Date: 2023-10-10
- Inventor: Kenji Sasaki , Yasunari Umemoto , Shigeki Koya , Shinnosuke Takahashi , Masao Kondo
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: JP 19169765 2019.09.18
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/06 ; H01L29/08 ; H01L29/205 ; H01L29/417 ; H01L27/02 ; H01L23/528 ; H03K17/60 ; H01L23/00 ; H03F3/189
Abstract:
An electrically conductive sub-collector layer is provided in a surface layer portion of a substrate. A collector layer, a base layer, and an emitter layer are located within the sub-collector layer when viewed in plan. The collector layer is connected to the sub-collector layer. An emitter electrode and a base electrode are long in a first direction when viewed in plan. The emitter electrode overlaps the emitter layer. The base electrode and the emitter electrode are discretely located away from each other in a second direction orthogonal to the first direction. A collector electrode is located on one side in the second direction with respect to the emitter electrode and is not located on the other side when viewed in plan. A base line is connected to the base electrode in a manner so as to adjoin a portion other than longitudinal ends of the base electrode.
Public/Granted literature
- US20210083080A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-03-18
Information query
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