- 专利标题： Voltage-controlled magnetoresistance device comprising layered magnetic material and layered ferroelectric material
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申请号： US17163829申请日： 2021-02-01
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公开(公告)号： US11785859B2公开(公告)日： 2023-10-10
- 发明人: Jun Woo Choi , Sang Yeop Lee , Hyejin Ryu , Chaun Jang
- 申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- 申请人地址： KR Seoul
- 专利权人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- 当前专利权人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- 当前专利权人地址： KR Seoul
- 代理机构： MARSHALL, GERSTEIN & BORUN LLP
- 优先权： KR 20200133133 2020.10.15
- 主分类号： H10N50/10
- IPC分类号： H10N50/10 ; H10N50/01 ; H10N50/80 ; H10N50/85
摘要：
Proposed is a magnetoresistance device, including a first layered magnetic material layer in which a magnetization direction is controlled depending on the voltage, a second layered magnetic material layer in which a magnetization direction is fixed in a predetermined direction, and a layered insulator layer interposed between the first and second layered magnetic material layers.
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