公开(公告)号：US20210365615A1

公开(公告)日：2021-11-25

申请号：US17072384

申请日：2020-10-16

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hee Young Kwon ,  Jun Woo Choi

IPC: G06F30/27 ,  G06N3/04

Abstract: Disclosed is a magnetic parameter value estimation method using deep learning, the magnetic parameter value estimation method including creating a simulated magnetic domain image corresponding to a spin configuration of a two-dimensional magnetic system created through computer simulation, modeling a deep neural network using the simulated magnetic domain image, and estimating a magnetic parameter value of an observed magnetic domain image using the modeled deep neural network.

公开(公告)号：US09099328B2

公开(公告)日：2015-08-04

申请号：US14052129

申请日：2013-10-11

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun Cheol Koo ,  Hyung-Jun Kim ,  Joon Yeon Chang ,  Jun Woo Choi ,  Suk Hee Han

IPC: H01L21/02 ,  H01L29/08 ,  H01L29/66 ,  H01L29/82 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/0673 ,  H01L29/41725 ,  H01L29/4238 ,  H01L29/66984

Abstract: A complementary device including a gate electrode, a channel, a source electrode connected to the gate electrode and the channel, and a first drain electrode and a second drain electrode connected to the gate electrode and the channel is provided. The first/second drain electrode is formed so that, in accordance with a voltage applied to the gate electrode, electron spins injected into the source electrode are moved from the source electrode to the first/second drain electrode through the channel while rotating in a first/second direction. Directions of the electron spins that reach the first drain electrode and the second drain electrode are opposite to each other.

Abstract translation: 提供了包括栅电极，沟道，连接到栅电极和沟道的源电极以及连接到栅电极和沟道的第一漏电极和第二漏电极的互补器件。 第一/第二漏极形成为使得根据施加到栅电极的电压，注入到源电极的电子自旋通过沟道从源电极移动到第一/第二漏电极，同时在第一 /第二个方向。 到达第一漏电极和第二漏电极的电子自旋的方向彼此相反。

公开(公告)号：US11934754B2

公开(公告)日：2024-03-19

申请号：US17072384

申请日：2020-10-16

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hee Young Kwon ,  Jun Woo Choi

IPC: G06F30/27 ,  G06N3/04 ,  G06N3/045 ,  G06N3/08 ,  G06N5/01 ,  G06N7/01 ,  G06N20/00 ,  H01F7/02 ,  G06F111/10

CPC classification number: G06F30/27 ,  G06N3/04 ,  G06N3/045 ,  G06N3/08 ,  G06N5/01 ,  G06N7/01 ,  G06N20/00 ,  H01F7/0294 ,  G06F2111/10

Abstract: Disclosed is a magnetic parameter value estimation method using deep learning, the magnetic parameter value estimation method including creating a simulated magnetic domain image corresponding to a spin configuration of a two-dimensional magnetic system created through computer simulation, modeling a deep neural network using the simulated magnetic domain image, and estimating a magnetic parameter value of an observed magnetic domain image using the modeled deep neural network.

公开(公告)号：US11785859B2

公开(公告)日：2023-10-10

申请号：US17163829

申请日：2021-02-01

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jun Woo Choi ,  Sang Yeop Lee ,  Hyejin Ryu ,  Chaun Jang

IPC: H10N50/10 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/10 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

Abstract: Proposed is a magnetoresistance device, including a first layered magnetic material layer in which a magnetization direction is controlled depending on the voltage, a second layered magnetic material layer in which a magnetization direction is fixed in a predetermined direction, and a layered insulator layer interposed between the first and second layered magnetic material layers.

公开(公告)号：US11706994B2

公开(公告)日：2023-07-18

申请号：US15930892

申请日：2020-05-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byoung-Chul Min ,  Jun Woo Choi ,  Hee Gyum Park

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/80 ,  H10B61/22 ,  H10N50/85

Abstract: Disclosed is an electric field-controlled magnetoresistive random-access memory (MRAM) including memory cells. The memory cell has a heterogenous double tunnel junction structure including a first tunnel junction and a second tunnel junction. The first tunnel junction includes a magnetic tunnel junction layer having a magnetization direction that changes according to spin transfer torque when an external voltage is applied, and the second tunnel junction includes an electric-field control layer that controls an electric field applied to the magnetic tunnel junction layer to induce a change in magnetic anisotropy within the magnetic tunnel junction layer. The heterogeneous tunnel junction structure combines electric field-controlled magnetic anisotropy and spin transfer torque to enable low power driving of memory cells, thereby enabling a high energy-efficient electric field-controlled MRAM.

公开(公告)号：US20220123204A1

公开(公告)日：2022-04-21

申请号：US17163829

申请日：2021-02-01

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jun Woo Choi ,  Sang Yeop Lee ,  Hyejin Ryu ,  Chaun Jang

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: Proposed is a magnetoresistance device, including a first layered magnetic material layer in which a magnetization direction is controlled depending on the voltage, a second layered magnetic material layer in which a magnetization direction is fixed in a predetermined direction, and a layered insulator layer interposed between the first and second layered magnetic material layers.