- 专利标题： 3D-printed field emission sources for compact systems
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申请号： US16868000申请日： 2020-05-06
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公开(公告)号： US11791121B2公开(公告)日： 2023-10-17
- 发明人: Luis Fernando Velásquez-García , Imperio Perales-Martinez
- 申请人： Massachusetts Institute of Technology , Instituto Tecnológico y de Estudios Superiores de Monterrey
- 申请人地址： US MA Cambridge
- 专利权人： Massachusetts Institute of Technology,Instituto Tecnológico y de Estudios Superiores de Monterrey
- 当前专利权人： Massachusetts Institute of Technology,Instituto Tecnológico y de Estudios Superiores de Monterrey
- 当前专利权人地址： US MA Cambridge; MX Monterrey
- 代理机构： Wolf, Greenfield & Sacks, P.C.
- 主分类号： H01J1/304
- IPC分类号： H01J1/304 ; H01J49/08 ; H01J35/06 ; H01J9/02 ; F03H1/00
摘要：
A field emission electron source and a method of manufacturing the same. A field emission electron source comprises an emitting electrode and an extractor gate electrode. The emitting electrode comprising a plurality of particles with nanosharp protrusions. The extractor gate electrode comprises a metal. The extractor gate electrode is formed in a same plane as the emitting electrode. The extractor gate electrode is formed surrounding the emitting electrode. A method of manufacturing a field emission electron source comprises forming an emitting electrode comprising a plurality of particles with nanosharp protrusions using a direct ink writing (DIW) printer. The method comprises forming an extractor gate electrode comprising a metal using the DIW printer.
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