Invention Grant
- Patent Title: Selective SIGESN:B deposition
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Application No.: US17577113Application Date: 2022-01-17
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Publication No.: US11791158B2Publication Date: 2023-10-17
- Inventor: Chen-Ying Wu , Yi-Chiau Huang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
Methods for depositing a silicon germanium tin boron (SiGeSn:B) film on a substrate are described. The method comprises exposing a substrate to a precursor mixture comprising a boron precursor, a silicon precursor, a germanium precursor, and a tin precursor to form a boron silicon germanium tin (SiGeSn:B) film on the substrate.
Public/Granted literature
- US20220230877A1 Selective SIGESN:B Deposition Public/Granted day:2022-07-21
Information query
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