Selective SIGESN:B Deposition
    4.
    发明申请

    公开(公告)号:US20220230877A1

    公开(公告)日:2022-07-21

    申请号:US17577113

    申请日:2022-01-17

    Abstract: Methods for depositing a silicon germanium tin boron (SiGeSn:B) film on a substrate are described. The method comprises exposing a substrate to a precursor mixture comprising a boron precursor, a silicon precursor, a germanium precursor, and a tin precursor to form a boron silicon germanium tin (SiGeSn:B) film on the substrate.

    INTEGRATED EPITAXY AND PRECLEAN SYSTEM

    公开(公告)号:US20220375751A1

    公开(公告)日:2022-11-24

    申请号:US17463966

    申请日:2021-09-01

    Abstract: Embodiments of the present disclosure generally relate to an integrated substrate processing system for cleaning a substrate surface and subsequently performing an epitaxial deposition process thereon. A processing system includes a film formation chamber, a transfer chamber coupled to the film formation chamber, and an oxide removal chamber coupled to the transfer chamber, the oxide removal chamber having a substrate support. The processing system includes a controller configured to introduce a process gas mixture into the oxide removal chamber, the process gas mixture including a fluorine-containing gas and a vapor including at least one of water, an alcohol, an organic acid, or combinations thereof. The controller is configured to expose a substrate positioned on the substrate support to the process gas mixture, thereby removing an oxide film from the substrate.

Patent Agency Ranking