- Patent Title: Semiconductor fabrication process and method of optimizing the same
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Application No.: US17719722Application Date: 2022-04-13
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Publication No.: US11791184B2Publication Date: 2023-10-17
- Inventor: Jiho Kim , Minhyeok Kwon , Shigenobu Maeda , Jooyeok Seo , Minuk Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Yongin-si
- Agency: F. Chau & Associates, LLC
- Priority: KR 20210097892 2021.07.26
- Main IPC: H01L21/67
- IPC: H01L21/67 ; G05B19/418

Abstract:
The program code, when executed by a processor, causes the processor to input fabrication data including a plurality of parameters associated with a semiconductor fabricating process to a framework to generate a first class for analyzing the fabrication data, to extract a first parameter targeted for analysis and a second parameter associated with the first parameter from the plurality of parameters and generate a second class for analyzing the first parameter as a sub class of the first class, to modify the first parameter and the second parameter into a data structure having a format appropriate to store in the second class, so as to be stored in the second class, to perform data analysis on the first parameter and the second parameter, to transform the first parameter and the second parameter into corresponding tensor data, and to input the tensor data to the machine learning model.
Public/Granted literature
- US20230023762A1 SEMICONDUCTOR FABRICATION PROCESS AND METHOD OF OPTIMIZING THE SAME Public/Granted day:2023-01-26
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