Invention Grant
- Patent Title: Contacts for twisted conductive lines within memory arrays
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Application No.: US17165276Application Date: 2021-02-02
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Publication No.: US11791260B2Publication Date: 2023-10-17
- Inventor: Byung Yoon Kim , Sangmin Hwang , Kyuseok Lee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L23/522 ; H10B12/00

Abstract:
Devices, systems, and methods for forming twisted conductive lines are described herein. One method includes: forming a first row and a second row of a first number of vertical conductive line contacts, the vertical contacts in each row are arrayed in a first horizontal direction and the first row is spaced from the second row in a second horizontal direction; forming a number of conductive lines with curved portions, each conductive line making contact with alternating conductive line contacts of the first and second rows of the first number of vertical conductive line contacts; and forming a second number of conductive lines with one or more curved portions, each conductive line making contact with the remaining ones of the conductive line contacts of the first and second rows of the first number of vertical conductive line contacts that have not been contacted by the first number of conductive lines.
Public/Granted literature
- US20220246525A1 CONTACTS FOR TWISTED CONDUCTIVE LINES WITHIN MEMORY ARRAYS Public/Granted day:2022-08-04
Information query
IPC分类: