Invention Grant
- Patent Title: Spin-orbit torque type magnetoresistance effect element, and method for producing spin-orbit torque type magnetoresistance effect element
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Application No.: US17978496Application Date: 2022-11-01
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Publication No.: US11793088B2Publication Date: 2023-10-17
- Inventor: Tomoyuki Sasaki , Yohei Shiokawa
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP 16210530 2016.10.27 JP 17138384 2017.07.14
- The original application number of the division: US16547670 2019.08.22
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H10N52/00 ; G11C11/18 ; H10B61/00 ; H10N50/01 ; H10N50/10 ; H10N50/85 ; H10N52/80

Abstract:
A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.
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