Invention Grant
- Patent Title: Conductive feature formation and structure
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Application No.: US17221958Application Date: 2021-04-05
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Publication No.: US11798843B2Publication Date: 2023-10-24
- Inventor: Yu Shih Wang , Chun-I Tsai , Shian Wei Mao , Ken-Yu Chang , Ming-Hsing Tsai , Wei-Jung Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US15880448 2018.01.25
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/532 ; H01L21/3213 ; H01L23/485

Abstract:
Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.
Public/Granted literature
- US20210225701A1 Conductive Feature Formation and Structure Public/Granted day:2021-07-22
Information query
IPC分类: