Invention Grant
- Patent Title: Semiconductor devices comprising electrical redistribution layer along with ground line and signal line and methods for manufacturing thereof
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Application No.: US17456806Application Date: 2021-11-29
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Publication No.: US11798874B2Publication Date: 2023-10-24
- Inventor: Walter Hartner , Francesca Arcioni , Tuncay Erdoel , Vincenzo Fiore , Helmut Kollmann , Arif Roni , Emanuele Stavagna , Christoph Wagner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Harrity & Harrity, LLP
- Priority: DE 2020132641.6 2020.12.08
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/552 ; H01L23/498 ; H01L23/66 ; H01L23/00 ; H01L23/528
Abstract:
A semiconductor device includes a semiconductor chip including an electrical contact arranged on a main surface of the semiconductor chip, an external connection element configured to provide a first electrical connection between the semiconductor device and a printed circuit board, and an electrical redistribution layer extending in a direction parallel to the main surface of the semiconductor chip and configured to provide a second electrical connection between the electrical contact of the semiconductor chip and the external connection element. The electrical redistribution layer includes a ground line connected to a ground potential and a signal line configured to carry an electrical signal having a wavelength.
Public/Granted literature
- US20220181246A1 SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THEREOF Public/Granted day:2022-06-09
Information query
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