Invention Grant
- Patent Title: Contact via formation
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Application No.: US17682884Application Date: 2022-02-28
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Publication No.: US11798884B2Publication Date: 2023-10-24
- Inventor: Lin-Yu Huang , Li-Zhen Yu , Chia-Hao Chang , Cheng-Chi Chuang , Kuan-Lun Cheng , Chih-Hao Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: HAYNES AND BOONE, LLP
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L23/522 ; H01L21/3213

Abstract:
Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes an active region including a channel region and a source/drain region and extending along a first direction, and a source/drain contact structure over the source/drain region. The source/drain contact structure includes a base portion extending lengthwise along a second direction perpendicular to the first direction, and a via portion over the base portion. The via portion tapers away from the base portion.
Public/Granted literature
- US20220293521A1 CONTACT VIA FORMATION Public/Granted day:2022-09-15
Information query
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