Invention Grant
- Patent Title: Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly
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Application No.: US16457690Application Date: 2019-06-28
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Publication No.: US11798991B2Publication Date: 2023-10-24
- Inventor: Aaron Lilak , Rishabh Mehandru , Willy Rachmady , Harold Kennel , Tahir Ghani
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L21/02 ; H01L21/8238
Abstract:
A device is disclosed. The device includes a channel, a first source-drain region adjacent a first portion of the channel, the first source-drain region including a first crystalline portion that includes a first region of metastable dopants, a second source-drain region adjacent a second portion of the channel, the second source-drain region including a second crystalline portion that includes a second region of metastable dopants. A gate conductor is on the channel.
Information query
IPC分类:
