Invention Grant
- Patent Title: Flash memory device used in neuromorphic computing system
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Application No.: US17538747Application Date: 2021-11-30
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Publication No.: US11800705B2Publication Date: 2023-10-24
- Inventor: Joon Young Kwak , Eunpyo Park , Suyoun Lee , Inho Kim , Jong-Keuk Park , Jaewook Kim , Jongkil Park , YeonJoo Jeong
- Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Seoul
- Assignee: Korea Institute of Science and Technology
- Current Assignee: Korea Institute of Science and Technology
- Current Assignee Address: KR Seoul
- Agency: Rabin & Berdo, P.C.
- Priority: KR 20210073555 2021.06.07
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/43 ; H01L29/423 ; H10B41/30 ; H01L29/66
Abstract:
A flash memory device is provided. The flash memory device is disposed on a substrate, a channel layer made of a two-dimensional material, sources and drains disposed at both ends of the channel layer, a tunneling insulating layer having a first dielectric constant and a tunneling insulating layer disposed on the channel layer, a floating gate made of a two-dimensional material, a blocking insulating layer disposed on the floating gate and having a second dielectric constant greater than the first dielectric constant, and an upper gate disposed on the blocking insulating layer.
Public/Granted literature
- US20220399353A1 FLASH MEMORY DEVICE USED IN NEUROMORPHIC COMPUTING SYSTEM Public/Granted day:2022-12-15
Information query
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