Methods, systems, and devices for word line structures for three-dimensional memory arrays are described. A memory device may include word line structures that support accessing memory cells arranged in a three-dimensional level architecture. The word line structures may be arranged above a substrate and be separated from each other by respective dielectric layers. Each word line structure may include word line members and a word line plate that is connected to each word line member. Each word line plate may include a contact that may be coupled with a word line decoder operable to bias the word line plate. To couple the word line plate to the word line decoder, the memory device may include first vias that extend through holes in the word line plates and are coupled with second vias that extend from a respective contact through openings in the word line plates above the contact.