Invention Grant
- Patent Title: Device comprising a transistor
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Application No.: US17584593Application Date: 2022-01-26
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Publication No.: US11804521B2Publication Date: 2023-10-31
- Inventor: Alexis Gauthier , Pascal Chevalier , Gregory Avenier
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: CROWE & DUNLEVY
- Priority: FR 09282 2019.08.19
- The original application number of the division: US16995054 2020.08.17
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L29/732
Abstract:
A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.
Public/Granted literature
- US20220149151A1 DEVICE COMPRISING A TRANSISTOR Public/Granted day:2022-05-12
Information query
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