Invention Grant
- Patent Title: Diode structures with one or more raised terminals
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Application No.: US17540339Application Date: 2021-12-02
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Publication No.: US11804543B2Publication Date: 2023-10-31
- Inventor: Vibhor Jain , Judson R. Holt
- Applicant: GlobalFoundries U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GlobalFoundries U.S. Inc.
- Current Assignee: GlobalFoundries U.S. Inc.
- Current Assignee Address: US NY Malta
- Agency: Thompson Hine LLP
- Agent Francois Pagette
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/66
Abstract:
Structures for a diode and methods of fabricating a structure for a diode. The structure includes a layer comprised of a semiconductor material. The layer includes a first section, a second section, and a third section laterally positioned between the first section and the second section. The structure includes a first terminal having a raised semiconductor layer on the first section of the layer, a second terminal including a portion on the second section of the layer, and a gate on the third section of the layer.
Public/Granted literature
- US20230067948A1 DIODE STRUCTURES WITH ONE OR MORE RAISED TERMINALS Public/Granted day:2023-03-02
Information query
IPC分类:
