公开(公告)号：US12009412B2

公开(公告)日：2024-06-11

申请号：US17549013

申请日：2021-12-13

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Shesh Mani Pandey ,  Judson R. Holt ,  Vibhor Jain

IPC分类号： H01L29/732 ,  H01L29/66

CPC分类号： H01L29/732 ,  H01L29/66234

摘要： The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: a base region composed of a semiconductor on insulator material; an emitter region above the base region; and a collector region under the base region and within a cavity of a buried insulator layer.

公开(公告)号：US11990535B2

公开(公告)日：2024-05-21

申请号：US17511613

申请日：2021-10-27

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Alexander M. Derrickson ,  Haiting Wang ,  Judson R. Holt ,  Vibhor Jain ,  Richard F. Taylor, III

IPC分类号： H01L29/737 ,  H01L21/02 ,  H01L21/225 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L29/66

CPC分类号： H01L29/737 ,  H01L21/02532 ,  H01L21/2251 ,  H01L29/0808 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/165 ,  H01L29/66242

摘要： Disclosed is a semiconductor structure including a lateral heterojunction bipolar transistor (HBT). The structure includes a substrate (e.g., a silicon substrate), an insulator layer on the substrate, and a semiconductor layer (e.g., a silicon germanium layer) on the insulator layer. The structure includes a lateral HBT with three terminals including a collector, an emitter, and a base, which is positioned laterally between the collector and the emitter and which can include a silicon germanium intrinsic base region for improved performance. Additionally, the collector and/or the emitter includes: a first region, which is epitaxially grown within a trench that extends through the semiconductor layer and the insulator layer to the substrate; and a second region, which is epitaxially grown on the first region. The connection(s) of the collector and/or the emitter to the substrate effectively form thermal exit path(s) and minimize self-heating. Also disclosed is a method for forming the structure.

公开(公告)号：US11923446B2

公开(公告)日：2024-03-05

申请号：US17503345

申请日：2021-10-17

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Vibhor Jain ,  Johnatan Avraham Kantarovsky ,  Mark David Levy ,  Ephrem Gebreselasie ,  Yves Ngu ,  Siva P. Adusumilli

IPC分类号： H01L29/778 ,  H01L29/40 ,  H01L29/66 ,  H01L29/49 ,  H01L29/43

CPC分类号： H01L29/7781 ,  H01L29/407 ,  H01L29/435 ,  H01L29/4916 ,  H01L29/4983 ,  H01L29/66431

摘要： The present disclosure relates generally to structures in semiconductor devices and methods of forming the same. More particularly, the present disclosure relates to high electron mobility transistor (HEMT) devices having a silicided polysilicon layer. The present disclosure may provide an active region above a substrate, source and drain electrodes in contact with the active region, a gate above the active region, the gate being laterally between the source and drain electrodes, a polysilicon layer above the substrate, and a silicide layer on the polysilicon layer. The active region includes at least two material layers with different band gaps. The polysilicon layer may be configured as an electronic fuse, a resistor, or a diode.

公开(公告)号：US20240045156A1

公开(公告)日：2024-02-08

申请号：US17816790

申请日：2022-08-02

申请人： GlobalFoundries U.S. Inc.

发明人： Yusheng Bian ,  Vibhor Jain ,  Steven M. Shank

IPC分类号： G02B6/42

CPC分类号： G02B6/4212 ,  G02B6/4215 ,  G02B6/4295 ,  G02B6/4274

摘要： A structure includes a dielectric waveguide, and at least one grating coupler adjacent the dielectric waveguide. Each grating coupler includes a set of parallel optofluidic grating channels oriented orthogonally to the dielectric waveguide. The structure may also include a radiation source operatively coupled to the dielectric waveguide, and an optical receiver such as a photosensor adjacent the grating coupler(s). The structure may be used as part of an optofluidic sensor system for, for example, biochemical applications.

公开(公告)号：US11855197B2

公开(公告)日：2023-12-26

申请号：US17580127

申请日：2022-01-20

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Shesh Mani Pandey ,  Alexander M. Derrickson ,  Judson R. Holt ,  Vibhor Jain

IPC分类号： H01L29/737 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/7371 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/66234

摘要： The present disclosure relates to semiconductor structures and, more particularly, to vertical bipolar transistors and methods of manufacture. The structure includes: an intrinsic base region comprising semiconductor-on-insulator material; a collector region confined within an insulator layer beneath the semiconductor-on-insulator material; an emitter region above the intrinsic base region; and an extrinsic base region above the intrinsic base region.

公开(公告)号：US11804541B2

公开(公告)日：2023-10-31

申请号：US17578011

申请日：2022-01-18

申请人： GlobalFoundries U.S. Inc.

发明人： Hong Yu ,  Vibhor Jain

IPC分类号： H01L29/735 ,  H01L29/08 ,  H01L29/66 ,  H01L29/417

CPC分类号： H01L29/735 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/6625

摘要： Embodiments of the disclosure provide a lateral bipolar transistor structure with an emitter/collector (E/C) contact to a doped semiconductor well and related methods. A bipolar transistor structure according to the disclosure may include a doped semiconductor well over a semiconductor substrate. An insulative region is on the doped semiconductor well. A base layer is on the insulative region, and an emitter/collector (E/C) layer on the insulative region and adjacent a first sidewall of the base layer. An E/C contact to the doped semiconductor well includes a lower portion adjacent the insulative region and an upper portion adjacent and electrically coupled to the E/C layer.

公开(公告)号：US11799021B2

公开(公告)日：2023-10-24

申请号：US17450842

申请日：2021-10-14

申请人： GlobalFoundries U.S. Inc.

发明人： Vibhor Jain ,  Alexander M. Derrickson ,  Judson R. Holt

IPC分类号： H01L29/735 ,  H01L29/08 ,  H01L27/12 ,  H01L29/66 ,  H01L29/06

CPC分类号： H01L29/735 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/6625

摘要： Embodiments of the disclosure provide a lateral bipolar transistor structure with a marker layer for emitter and collector terminals. A lateral bipolar transistor structure according to the disclosure includes a semiconductor layer over an insulator layer. The semiconductor layer includes an emitter/collector (E/C) region having a first doping type and an intrinsic base region adjacent the E/C region and having a second doping type opposite the first doping type. A marker layer is on the E/C region of the semiconductor layer, and a raised E/C terminal is on the marker layer. An extrinsic base is on the intrinsic base region of the semiconductor layer, and a spacer is horizontally between the raised E/C terminal and the extrinsic base.

公开(公告)号：US11777019B2

公开(公告)日：2023-10-03

申请号：US17586862

申请日：2022-01-28

申请人： GlobalFoundries U.S. Inc.

发明人： Hong Yu ,  Vibhor Jain ,  Judson R. Holt

IPC分类号： H01L29/737 ,  H01L29/08 ,  H01L29/66 ,  H01L29/735

CPC分类号： H01L29/737 ,  H01L29/0821 ,  H01L29/66242 ,  H01L29/735

摘要： Disclosed is a semiconductor structure including a device, such as a lateral heterojunction bipolar transistor (HBT), made up of a combination of at least three different semiconductor materials with different bandgap sizes for improved performance. In the device, a base layer of the base region can be positioned laterally between a collector layer of a collector region and an emitter layer of an emitter region and can be physically separated therefrom by buffer layers. The base layer can be made of a narrow bandgap semiconductor material, the collector layer and, optionally, the emitter layer can be made of a wide bandgap semiconductor material, and the buffer layers can be made of a semiconductor material with a bandgap between that of the narrow bandgap semiconductor material and the wide bandgap semiconductor material. Also disclosed herein is a method of forming the structure.

公开(公告)号：US11749747B2

公开(公告)日：2023-09-05

申请号：US17574661

申请日：2022-01-13

申请人： GlobalFoundries U.S. Inc.

发明人： Judson R. Holt ,  Vibhor Jain ,  Jeffrey B. Johnson ,  John J. Pekarik

IPC分类号： H01L29/737 ,  H01L29/66 ,  H01L21/763 ,  H01L29/06

CPC分类号： H01L29/7371 ,  H01L21/763 ,  H01L29/0642 ,  H01L29/66242

摘要： Embodiments of the disclosure provide a bipolar transistor structure with a collector on a polycrystalline isolation layer. A polycrystalline isolation layer may be on a substrate, and a collector layer may be on the polycrystalline isolation layer. The collector layer has a first doping type and includes a polycrystalline semiconductor. A base layer is on the collector layer and has a second doping type opposite the first doping type. An emitter layer is on the base layer and has the first doping type. A material composition of the doped collector region is different from a material composition of the base layer.

公开(公告)号：US11710771B2

公开(公告)日：2023-07-25

申请号：US17524043

申请日：2021-11-11

申请人： GlobalFoundries U.S. Inc.

发明人： Alexander Derrickson ,  Judson R. Holt ,  Haiting Wang ,  Jagar Singh ,  Vibhor Jain

IPC分类号： H01L29/10 ,  H01L29/08 ,  H01L29/66 ,  H01L29/735 ,  H01L29/737

CPC分类号： H01L29/1008 ,  H01L29/0808 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/6625 ,  H01L29/6656 ,  H01L29/66242 ,  H01L29/66553 ,  H01L29/735 ,  H01L29/737

摘要： Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes an emitter having a raised portion, a collector having a raised portion, and a base having a base layer and an extrinsic base layer stacked with the base layer. The base layer and the extrinsic base layer are positioned in a lateral direction between the raised portion of the emitter and the raised portion of the collector, the base layer has a first width in the lateral direction, the extrinsic base layer has a second width in the lateral direction, and the second width is greater than the first width.