Invention Grant
- Patent Title: Radio frequency switch
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Application No.: US17461621Application Date: 2021-08-30
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Publication No.: US11804869B2Publication Date: 2023-10-31
- Inventor: Jun-De Jin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H04B1/48
- IPC: H04B1/48 ; H01Q1/50 ; H01L23/66 ; H01L29/66 ; H01L29/51 ; H01L29/78

Abstract:
Disclosed is a RF switch module and methods to fabricate and operate such RF switch to alternatively couple an antenna to either a transmitter transmission line or a receiver transmission line to realize lower distortion of a signal at high frequencies with improved insertion loss and without affecting isolation. In one embodiment, a Radio Frequency (RF) switch module, includes, a switch circuit for switching between transmitting first signals from a transmitter unit to an antenna and transmitting second signals from the antenna to the receiver unit, wherein the switch circuit comprises a plurality of field effect transistors (FETs), wherein each of the plurality of FETs comprises stacked gate dielectrics and at least three metal contacts to a conductive gate, wherein the stacked gate dielectrics comprises at least one first dielectric layer, wherein the first dielectric layer comprises a negative-capacitance material.
Public/Granted literature
- US20210391891A1 RADIO FREQUENCY SWITCH Public/Granted day:2021-12-16
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